| 摘要 |
PURPOSE: A plasma generation unit and a substrate processing apparatus are provided to improve the uniformity of a plasma process by controlling the size of a high frequency current applied to a coil type antenna and an electrode. CONSTITUTION: In a plasma generation unit and a substrate processing apparatus, a processing chamber(100) has a bottom wall(110), a sidewall(120), and an upper wall(130). The coil type antenna(340a) generates inductive coupled plasma. An electrode(320) generates plasma through capacitive coupling. A power supply unit(360) applies a high-frequency current to the coil type antenna and the electrode. A driving shaft(240) transfers a driving force which is generated in a generator to a spin chuck.
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