摘要 |
A memory apparatus (100, 200, 300, 500, 600, 700) has a plurality of memory banks (d0 to d7, m0 to m3, p, p0, p1), wherein a write or erase operation to the memory banks (d0 to d7, m0 to m3, p, p0, p1) is substantially slower than a read operation to the banks (d0 to d7, m0 to m3, p, p0, p1). The memory apparatus (100, 200, 300, 500, 600, 700) is configured to read a redundant storage of data instead of a primary storage location in the memory banks (d0 to d7, m0 to m3, p, p0, p1) for the data or reconstruct requested data in response to a query for the data when the primary storage location is undergoing at least one of a write operation and an erase operation. |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
MCLAREN, MORAY;ARGOLLO DE OLIVEIRA DIAS, EDUARDO, JR.;FARABOSCHI, PAOLO |