Selengleichrichter mit leitfaehigkeitserhoehenden Zusaetzen in der Selenschicht

摘要

A selenium rectifier is formed by vaporizing selenium on to a base plate in vacuum. The base plate temperature may be adjusted so that part or the whole of the selenium layer thus formed is amorphous. A solution of shellac is applied to the layer followed by a counter electrode. The selenium is then converted to the crystalline state by heating in one or more stages during one or more of which the counter electrode is melted. The selenium may contain halogen and boron, aluminium, gallium or indium.