| 摘要 |
<p>PURPOSE: A method for fabricating flexible substrate, a thin film transistor and a method for fabricating using the same are provided to reduce the thickness of a thin film transistor by the thickness of a gate electrode by burying a gate electrode in the engraved pattern of a substrate. CONSTITUTION: In a method for fabricating flexible substrate, a thin film transistor and a method for fabricating using the same, a first engraved pattern and a second engraved pattern are separated from each other in a substrate(100), A gate electrode(110) and a pad electrode(120) are buried in a first engraved pattern and a second engraved pattern. A gate insulating layer(130) is formed on a substrate. A semiconductor layer(140) is formed on a region corresponding to the gate electrode on the gate insulating film. An ohmic contact layer(150) is formed on the semiconductor layer.</p> |
