METHOD FOR FORMING METAL FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A method for forming metal film and a method for manufacturing a semiconductor device using the same are provided to improve the reliability and productivity of a semiconductor device by forming a metal line having improved signal transmission speed through low price simple process. CONSTITUTION: In a method for forming metal film and a method for manufacturing a semiconductor device using the same, a hole exposing a conductive region(104) is formed on a substrate(100). A barrier film is formed on the inner wall of a hole and on the top of an insulating layer pattern(120). A first metal layer is formed on the barrier film. A barrier film pattern(130A) and a first metal layer pattern(140A) are formed by removing the unnecessary part of the insulating layer pattern. A second metal-capping layer(170) is formed on the insulating layer pattern and the first metal layer pattern.