发明名称 |
Patterning process using EB or EUV lithography |
摘要 |
A chemically amplified positive resist composition for EB or EUV lithography is provided comprising (A) a polymer or a blend of polymers wherein a film of the polymer or polymer blend is insoluble in alkaline developer, but turns soluble under the action of acid, (B) an acid generator, (C) a basic compound, and (D) a solvent. The basic compound (C) is a polymer comprising recurring units bearing a side chain having a secondary or tertiary amine structure as a basic active site and constitutes a part or the entirety of the polymer or polymers as component (A). |
申请公布号 |
EP2360527(A1) |
申请公布日期 |
2011.08.24 |
申请号 |
EP20110001082 |
申请日期 |
2011.02.10 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
MASUNAGA, KEIICHI;WATANABE, SATOSHI;TANAKA, AKINOBU;DOMON, DAISUKE |
分类号 |
G03F7/039;C08F212/02;C08F220/30;C08F220/34;G03F7/004;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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