发明名称 Low temperature deposition and ultra fast annealing of integrated circuit thin film capacitor
摘要 Some embodiments of the invention include thin film capacitors formed on a package substrate of an integrated circuit package. At least one of the film capacitors includes a first electrode layer, a second electrode layer, and a dielectric layer between the first and second electrode layers. Each of the first and second electrode layers and the dielectric layer is formed individually and directly on the package substrate. Other embodiments are described and claimed.
申请公布号 US8003479(B2) 申请公布日期 2011.08.23
申请号 US20060277606 申请日期 2006.03.27
申请人 INTEL CORPORATION 发明人 SALAMA ISLAM A.;MIN YONGKI
分类号 H01L21/20 主分类号 H01L21/20
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