发明名称 Method of manufacturing semiconductor device
摘要 A substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of confirming an operation of a liquid flowrate control device are provided. The substrate processing apparatus comprises: a process chamber accommodating a substrate; a liquid source supply system supplying a liquid source into the process chamber; a solvent supply system supplying a solvent having a vapor pressure greater than that of the liquid source into the process chamber; a liquid flowrate control device controlling flowrates of the liquid source and the solvent; and a controller controlling the liquid source supply system, the solvent supply system, and the liquid flowrate control device so that the solvent is supplied into the liquid flowrate control device than the solvent supply system to confirm an operation of the liquid flowrate control device before the liquid source supply system supplies the liquid source into the process chamber.
申请公布号 US8003547(B2) 申请公布日期 2011.08.23
申请号 US20100850863 申请日期 2010.08.05
申请人 HITACHI KOKUSAI ELECTRIC, INC. 发明人 SAKAI MASANORI
分类号 H01L21/31 主分类号 H01L21/31
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