发明名称 |
Manufacture method for semiconductor device having MIM capacitor, and semiconductor device |
摘要 |
A first electrode film containing TiAlN and a main dielectric film containing tantalum oxide are formed over a semiconductor substrate. Anneal is performed in the state that the first electrode film and the main dielectric film are formed, to react aluminum (Al) in the first electrode film with oxygen (O) in the main dielectric film and form a subsidiary dielectric film containing aluminum oxide at an interface between the first electrode film and the main dielectric film. A second electrode film is formed facing the first electrode film via the main dielectric film and the subsidiary dielectric film.
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申请公布号 |
US8003462(B2) |
申请公布日期 |
2011.08.23 |
申请号 |
US20090365276 |
申请日期 |
2009.02.04 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
NAKABAYASHI MASAAKI |
分类号 |
H01L21/8242 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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