发明名称 |
Methods of manufacturing a semiconductor device using a layer suspended across a trench |
摘要 |
In methods of forming a trench, first patterns separated from each other by a first width and second patterns separated from each other by a second width are formed on a substrate. The second width is wider than the first width. The substrate is etched using the first patterns and the second patterns to form a first trench having a first depth and a preliminary second trench having a second depth. A sacrificial layer is formed to fill up a space between the first patterns. The substrate is etched using the sacrificial layer to form a second trench having a third depth deeper than the second depth.
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申请公布号 |
US8003487(B2) |
申请公布日期 |
2011.08.23 |
申请号 |
US20080335831 |
申请日期 |
2008.12.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO DU-HYUN;SONG JONG-HEUI;JEONG SANG-SUP;KANG TAE-WOO;YOO SEUNG-JOO |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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