发明名称 |
Photon-emission scanning tunneling microscopy |
摘要 |
The present invention relates to an indirect-gap semiconductor substrate, the gap being greater than that of silicon and preferably greater than 1.5 eV, to its use for imaging a specimen by photon-emission scanning tunnel microscopy, and to a photon-emission scanning tunnel imaging method using such an indirect-gap semiconductor substrate. Advantageously, the indirect-gap semiconductor substrate is made of silicon carbide. The present invention also relates to devices for implementing the imaging method according to the invention.
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申请公布号 |
US8006315(B2) |
申请公布日期 |
2011.08.23 |
申请号 |
US20060087103 |
申请日期 |
2006.12.20 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;UNIVERSITE PARIS SUD (PARIS II) |
发明人 |
CHARRA FABRICE;SILLY MATTHIEU;SOUKIASSIAN PATRICK |
分类号 |
G01N13/00;G01Q10/00;G01Q30/00;G01Q60/10;G01Q60/12;G12B1/00 |
主分类号 |
G01N13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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