发明名称 Copper alloy bonding wire for semiconductor device
摘要 The present invention provides a semiconductor-device copper-alloy bonding wire which has an inexpensive material cost, ensures a superior ball joining shape, wire joining characteristic, and the like, and a good loop formation characteristic, and a superior mass productivity. The semiconductor-device copper-alloy bonding wire contains at least one of Mg and P in total of 10 to 700 mass ppm, and oxygen within a range from 6 to 30 mass ppm.
申请公布号 US8004094(B2) 申请公布日期 2011.08.23
申请号 US20100892122 申请日期 2010.09.28
申请人 NIPPON STEEL MATERIALS CO., LTD.;NIPPON MICROMETAL CORPORATION 发明人 UNO TOMOHIRO;KIMURA KEIICHI;YAMADA TAKASHI
分类号 H01L21/00 主分类号 H01L21/00
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