发明名称 |
Manufacturing method for semiconductor device |
摘要 |
A manufacturing method for a semiconductor device having patterns including two adjacent sides forming a corner portion with an external angle and a periodic pattern with a high density arrangement in the same layer is provided with (a) the step of exposing the first divided pattern including a first side which is obtained by dividing the pattern including two sides and the region which corresponds to a first thinned out pattern from which the periodic pattern is thinned out to light through a first mask having a first mask pattern, and (b) the step of exposing the second divided pattern including a second side which is obtained by dividing the pattern including two sides and the region which corresponds to a second thinned out pattern which is obtained by thinning out the periodic pattern to light through a first mask having a second mask pattern.
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申请公布号 |
US8003301(B2) |
申请公布日期 |
2011.08.23 |
申请号 |
US20080003887 |
申请日期 |
2008.01.03 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
IMAI AKIRA;SHINOHARA MASAAKI |
分类号 |
G03F7/26;G03F7/20;H01L21/027;H01L21/3205;H01L21/768 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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