| 摘要 |
A heat processing apparatus for a semiconductor process includes a reaction tube including a process field configured to store a plurality of target substrates stacked at intervals. A gas supply duct is integrally provided outside the wall of the reaction tube to extend vertically in a range that covers the process field. A plurality of gas delivery holes are formed in the side portion of the wall of the reaction tube, to be vertically arrayed in a range that covers the process field and communicate with the gas supply duct. A gas supply system is connected to a bottom portion of the gas supply duct to supply a process gas to the process field through the gas supply duct and the plurality of gas delivery holes.
|
