发明名称 |
Method for forming interconnects for 3-D applications |
摘要 |
A method for forming an interconnect, comprising (a) providing a substrate (203) with a via (205) defined therein; (b) forming a seed layer (211) such that a first portion of the seed layer extends over a surface of the via, and a second portion of the seed layer extends over a portion of the substrate; (c) removing the second portion of the seed layer; and (d) depositing a metal (215) over the first portion of the seed layer by an electroless process.
|
申请公布号 |
US8003517(B2) |
申请公布日期 |
2011.08.23 |
申请号 |
US20070807777 |
申请日期 |
2007.05.29 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
MATHEW VARUGHESE;ACOSTA EDDIE;CHATTERJEE RITWIK;GARCIA SAM S. |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|