发明名称 Manufacturing method of semiconductor device
摘要 A manufacturing method of a semiconductor device according to the present invention comprises: laminating a surface protective sheet to a circuit surface side of a wafer formed with grooves which divide each circuit wherein an adhesive film is adhered on the circuit surface of the wafer; reducing the thickness of the wafer and finally dividing the wafer into individual chips by grinding a back face of the wafer; picking up individual chips together with the adhesive film; die-bonding said individual chip to predetermined position of a chip mounting substrate via said adhesive film; fixing the chip to the chip mounting substrate by heating the die-bonded chip having the adhesive film; and applying a static pressure larger than an ambient pressure by 0.05 MPa or more to a stacked body including the adhesive film one or more times, at any point between adhering the wafer to the adhesive film and fixing the chip to the chip mounting substrate.
申请公布号 US8003441(B2) 申请公布日期 2011.08.23
申请号 US20080670127 申请日期 2008.07.18
申请人 LINTEC CORPORATION 发明人 MAEDA JUN;TANAKA KEIKO;YAMAZAKI OSAMU
分类号 H01L21/301;H01L21/304;H01L21/58;H01L21/60 主分类号 H01L21/301
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