发明名称 Methods for forming anti-reflection structures for CMOS image sensors
摘要 Protuberances, having vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode, are formed at an optical interface between two layers having different refractive indices. The protuberances may be formed by employing self-assembling block copolymers that form an array of sublithographic features of a first polymeric block component within a matrix of a second polymeric block component. The pattern of the polymeric block component is transferred into a first optical layer to form an array of nanoscale protuberances. Alternately, conventional lithography may be employed to form protuberances having dimensions less than the wavelength of light. A second optical layer is formed directly on the protuberances of the first optical layer. The interface between the first and second optical layers has a graded refractive index, and provides high transmission of light with little reflection.
申请公布号 US8003425(B2) 申请公布日期 2011.08.23
申请号 US20080120459 申请日期 2008.05.14
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ADKISSON JAMES W.;ELLIS-MONAGHAN JOHN J.;GAMBINO JEFFREY P.;MUSANTE CHARLES F.
分类号 H01L21/00 主分类号 H01L21/00
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