发明名称 |
Semiconductor device manufacturing method and target substrate processing system |
摘要 |
A semiconductor device manufacturing method includes removing copper deposits, by use of an organic acid gas and an oxidizing gas, from a surface of a second interlayer insulation film having a groove formed therein and reaching a copper-containing electric connector member. The second interlayer insulation film is disposed on a first interlayer insulation film provided with the electric connector member. The method then includes reducing a surface of the electric connector member exposed at a bottom of the groove of the second interlayer insulation film; forming a barrier layer on the second interlayer insulation film; and forming a copper-containing conductive film to fill the groove of the second interlayer insulation film.
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申请公布号 |
US8003535(B2) |
申请公布日期 |
2011.08.23 |
申请号 |
US20080173350 |
申请日期 |
2008.07.15 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
MIYOSHI HIDENORI;HAYASHI KAZUICHI |
分类号 |
H01L21/44;C23C16/18;H01L21/28;H01L21/285;H01L21/304;H01L21/3065;H01L21/768 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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