发明名称 |
DIELECTRIC BARRIER DEPOSITION USING OXYGEN CONTAINING PRECURSOR |
摘要 |
A method is provided for depositing a dielectric barrier film including a precursor with silicon, carbon, oxygen, and hydrogen with improved barrier dielectric properties including lower dielectric constant and superior electrical properties. This method will be important for barrier layers used in a damascene or dual damascene integration for interconnect structures or in other dielectric barrier applications. In this example, specific structural properties are noted that improve the barrier performance. |
申请公布号 |
KR20110094205(A) |
申请公布日期 |
2011.08.22 |
申请号 |
KR20117015317 |
申请日期 |
2009.11.25 |
申请人 |
AIR PRODUCTS AND CHEMICALS, INC. |
发明人 |
MATZ LAURA M.;VRTIS RAYMOND NICHOLAS;O'NEILL MARK LEONARD;SINATORE DINO |
分类号 |
C23C16/32;C23C16/448;H01L21/205 |
主分类号 |
C23C16/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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