发明名称 |
THIN FILM TRANSISTOR AND DISPLAY DEVICE |
摘要 |
Off current of a bottom gate thin film transistor in which a semiconductor layer is shielded from light by a gate electrode is reduced. A thin film transistor includes a gate electrode layer; a first semiconductor layer; a second semiconductor layer, provided on and in contact with the first semiconductor layer; a gate insulating layer between and in contact with the gate electrode layer and the first semiconductor layer; impurity semiconductor layers in contact with the second semiconductor layer; and source and drain electrode layers partially in contact with the impurity semiconductor layers and the first and second semiconductor layers. The entire surface of the first semiconductor layer on the gate electrode layer side is covered by the gate electrode layer; and a potential barrier at a portion where the first semiconductor layer is in contact with the source or drain electrode layer is 0.5 eV or more. |
申请公布号 |
KR20110094212(A) |
申请公布日期 |
2011.08.22 |
申请号 |
KR20117015810 |
申请日期 |
2009.11.17 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
GODO HIROMICHI;KOBAYASHI SATOSHI;MIYAIRI HIDEKAZU;ISA TOSHIYUKI;YAMAZAKI SHUNPEI |
分类号 |
H01L29/786;G02F1/136 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|