METHOD FOR THE CONTROLLED GROWTH OF A GRAPHENE FILM

摘要

The invention relates to a controlled graphene film growth process characterized in that it comprises the following steps: the production on the surface of a substrate (S1) of a layer of a metal having with carbon a phase diagram such that above a molar concentration threshold ratio CM/CM+CC, where CM is the molar metal concentration in a metal/carbon mixture and CC is the molar carbon concentration in said mixture, a homogeneous solid solution is obtained; the exposure of the metal layer to a controlled flux of carbon atoms or carbon-containing radicals or carbon-containing ions at a temperature such that the molar concentration ratio obtained is greater than the threshold ratio so as to obtain a solid solution of carbon in the metal; and an operation for modifying the phase of the mixture into two phases, a metal phase and a graphite phase respectively, leading to the formation of at least a lower graphene film (31) located at the (metal layer incorporating carbon atoms)/substrate interface and an upper graphene film (30) at the surface of the metal layer.