| 摘要 |
PURPOSE: A vertical plasma processing apparatus for processing a semiconductor is provided to increase the generation efficiency of plasma by setting the pressure of a plasma generation region within 0.5-0.7 torr. CONSTITUTION: In a vertical plasma processing apparatus for processing a semiconductor, the ceiling of quartz is arranged on the ceiling of a reaction container(4). A manifold(8) supports the bottom of the reaction container. The wafer boat(12) of quartz is raised through the opening of the bottom of the manifold. The wafer boat is loaded on the table through a heat reserving cover(14) A rotary shaft(20) is installed in the end of the arm(26) which is supported by a lifting mechanism(25).
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