| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element capable of operating on a low operation current or operation voltage, a manufacturing method thereof, and an electronic device. SOLUTION: In the nitride semiconductor light-emitting element, an n-type layer 1, a p-type layer 2, and an active layer 105 are laminated on the main surface of a substrate 101, whose main surface is a non-polar plane. The active layer 105 is sandwiched between the n-type layer 1 and the p-type layer 2; the active layer 105 consists of a barrier-wall layer of N+1 layer and a quantum-well layer of N-layer sandwiched between the barrier-wall layers, where N is an integer of 2 or larger; and the barrier wall layer closest to the substrate 101 is an undoped layer, and at least one of the other barrier wall layers is a doped layer. COPYRIGHT: (C)2011,JPO&INPIT |
