发明名称 |
Transistor of Volatile Memory Device with Gate Dielectric Structure Capable of Trapping Charges and Method for Fabricating the Same |
摘要 |
The present invention relates to a transistor of a volatile memory device with gate dielectric structure capable of trapping charges and a method for fabricating the same. The transistor in a cell region of a volatile memory device includes a substrate of a first conductive type; a gate dielectric structure capable of trapping charges and formed on the substrate; a gate formed on the gate dielectric structure; a gate insulation layer formed on the gate; a source/drain of a second conductive type formed in a predetermined region of the substrate disposed beneath each lateral side of the gate; and a channel ion implantation region of the first conductive type formed in a predetermined region of the substrate disposed beneath the gate.
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申请公布号 |
US2011198701(A1) |
申请公布日期 |
2011.08.18 |
申请号 |
US201113094692 |
申请日期 |
2011.04.26 |
申请人 |
LEE SANG-DON;KIM YIL-WOOK;AHN JIN-HONG;PARK YOUNG-JUNE |
发明人 |
LEE SANG-DON;KIM YIL-WOOK;AHN JIN-HONG;PARK YOUNG-JUNE |
分类号 |
H01L27/092;H01L27/10;G11C11/401;H01L21/265;H01L21/28;H01L21/314;H01L21/336;H01L21/822;H01L21/8238;H01L21/8242;H01L21/8246;H01L27/108;H01L29/51;H01L29/76;H01L29/78;H01L29/792 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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地址 |
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