| 摘要 |
A process for producing a high-performance photovoltaic device by depositing a high-quality crystalline silicon layer, and a deposition apparatus for depositing the high-quality crystalline silicon layer. A process for producing a photovoltaic device that comprises forming a crystalline silicon-based photovoltaic layer comprising an i-layer on a substrate using a plasma-enhanced CVD method, wherein formation of the i-layer comprises an initial layer deposition stage and a bulk i-layer deposition stage, and the initial layer deposition stage comprises depositing the initial layer using a silane-based gas flow rate during the initial layer deposition stage that is lower than the silane-based gas flow rate during the bulk i-layer deposition stage, with the deposition time for the initial layer deposition stage set to not less than 0.5% and not more than 20% of the total deposition time for the i-layer, and with the SiH* emission intensity during the initial layer deposition stage not, more than 80% of the stabilized SiH* emission intensity during the bulk i-layer deposition stage.
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