| 发明名称 |
DIELECTRIC LAYER FOR SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides.
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| 申请公布号 |
US2011198710(A1) |
申请公布日期 |
2011.08.18 |
| 申请号 |
US201113039811 |
申请日期 |
2011.03.03 |
| 申请人 |
LEE JONG-HO;LEE NAE-IN |
发明人 |
LEE JONG-HO;LEE NAE-IN |
| 分类号 |
H01L29/772;H01L21/28;H01L29/06;H01L29/51;H01L29/788;H01L29/94 |
主分类号 |
H01L29/772 |
| 代理机构 |
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代理人 |
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| 主权项 |
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