NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: A nitride semiconductor light emitting device is provided to use a light extraction pattern which is formed by eliminating layers from a semiconductor layer until an active layer is eliminated, thereby increasing light extraction efficiency. CONSTITUTION: A light emitting structure is formed on a substrate(110). The light emitting structure includes a first conductive nitride semiconductor layer(120), an active layer(130), and a second conductive nitride semiconductor layer(140). A first electrode(150) is electrically connected to the first conductive nitride semiconductor layer. A second electrode(160) is electrically connected to the second conductive nitride semiconductor layer. A light extraction pattern(170) has a through hole.