METHOD FOR FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICE
摘要
<p>PURPOSE: A micro pattern forming method of a semiconductor device is provided to independently form and pattern first and second photosensitive patterns, thereby forming a smaller and more reliable micro pattern. CONSTITUTION: A boundary film is formed on a pattern target layer and a plurality of first photosensitive patterns(S110). A flat film is formed on the boundary film(S120). A plurality of second photosensitive patterns is formed on the flat film(S130). A plurality of flat film patterns is formed by using the second photosensitive patterns(S140). A plurality of pattern target layer patterns is formed using the flat film patterns and the first photosensitive patterns(S150).</p>
申请公布号
KR20110093495(A)
申请公布日期
2011.08.18
申请号
KR20100013582
申请日期
2010.02.12
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
CHANG, CHONG KWANG;OH, YOUNG MOOK;NAM, SEO WOO;JEON, WOO CHEOL;YI, JU BEOM;LEE, MYUNG JOO