| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a heat treatment method and a heat treatment apparatus, wherein a substrate surface is uniformly heated to higher temperature to decrease a sheet resistance value. <P>SOLUTION: While a semiconductor wafer W in which a carbon thin film 12 is formed on a surface of a silicon substrate 11 implanted with impurities is preheated, its surface is supplied with an oxygen gas more at a peripheral edge portion than at a center portion to perform processing such that a film thickness of the carbon thin film 12 decreases from the center portion to the peripheral edge portion. Consequently, the semiconductor wafer W has low absorption of flash light at the peripheral edge portion where light intensity is high during flash light irradiation, and has high absorption of the flash light at the center portion where the light intensity is low to the contrary. The degree of a temperature rise by the thin film 12 as a light absorption film therefore becomes substantially uniform in a plane of the semiconductor W, so that an in-plane temperature distribution of the semiconductor wafer W during the flash light irradiation can be made uniform. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
