| 摘要 |
PROBLEM TO BE SOLVED: To improve the picture quality of a solid-state imaging apparatus by reducing optical color mixing and/or reducing an Mg flare, and further suppressing a dark current. SOLUTION: This invention relates to a back irradiation type CMOS solid-state imaging apparatus, which has a pixel region 23 where a plurality of pixels 24 each composed of a photoelectric conversion portion PD and a pixel transistor Tr are arrayed, a light shield film 39 formed in the pixel region 23, and an antireflective film 36 on a light reception portion side as compared with the light shield film 39, the antireflective film 36 having a hafnium oxide film 38. COPYRIGHT: (C)2011,JPO&INPIT |
