| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a silicon dioxide film on a substrate through chemical vapor deposition of silane oxide precursors. SOLUTION: This method is based on the reaction of silane precursors represented by formula with an oxidizing agent. In the formula, respective R and R<SP>1</SP>are selected from a group consisting of 2-10C alkyl, linear, branched, or cyclic, saturated or unsaturated, aromatic alkylamino; R and R<SP>1</SP>in formula A and formula C in the formula may be also formed into a cyclic group (CH<SB>2</SB>)<SB>n</SB>(where n is from 1-6, preferably 4 and 5); and R<SP>2</SP>represents a single bond, (CH<SB>2</SB>)<SB>n</SB>chain, a ring, SiR<SB>2</SB>, or SiH<SB>2</SB>. COPYRIGHT: (C)2011,JPO&INPIT |
