发明名称 |
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE |
摘要 |
A semiconductor device includes a thin film transistor and a thin film diode on a same substrate. A semiconductor layer (109) of the thin film transistor and a semiconductor layer (110) of the thin film diode are crystalline semiconductor layers formed by crystallizing the same non-crystalline semiconductor film. The thickness of the semiconductor layer (110) of the thin film diode is greater than the thickness of the semiconductor layer (109) of the thin film transistor, and the surface of the semiconductor layer (110) of the thin film diode is rougher than the surface of the semiconductor layer (109) of the thin film transistor.
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申请公布号 |
US2011198608(A1) |
申请公布日期 |
2011.08.18 |
申请号 |
US200913125776 |
申请日期 |
2009.10.22 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
YAMANAKA MASAKI;NAKATSUJI HIROSHI;MAKITA NAOKI |
分类号 |
H01L31/0368;B82Y99/00;H01L21/20;H01L29/04;H01L29/786;H01L31/14 |
主分类号 |
H01L31/0368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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