| 发明名称 |
C-PLANE SAPPHIRE METHOD |
| 摘要 |
<p>A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.</p> |
| 申请公布号 |
KR20110093922(A) |
申请公布日期 |
2011.08.18 |
| 申请号 |
KR20117015112 |
申请日期 |
2007.09.21 |
| 申请人 |
SAINT-GOBAIN CERAMICS AND PLASTICS, INC. |
发明人 |
TATARTCHENKO VITALI;JONES CHRISTOPHER D.;ZANELLA STEVEN A.;LOCHER JOHN W.;PRANADI FERY |
| 分类号 |
C30B15/34;C30B29/20;H01L31/00 |
主分类号 |
C30B15/34 |
| 代理机构 |
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代理人 |
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| 地址 |
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