发明名称 |
TRANSISTOR AND METHOD FOR FABRICATING THE SAME |
摘要 |
The invention provides a transistor having a leak current between a source and drain in a nitride compound semiconductor formed on a substrate that is reduced. A gate electrode, a source electrode and a drain electrode are formed respectively on the surface of the nitride compound semiconductor formed on the silicon substrate in the transistor. At least one of the source electrode and the drain electrode is surrounded by an auxiliary electrode connected with the gate electrode. Because a depletion layer is formed in the nitride compound semiconductor under the auxiliary electrode, a route of the leak current is shut off and the leak current between the source and drain may be effectively reduced.
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申请公布号 |
US2011198669(A1) |
申请公布日期 |
2011.08.18 |
申请号 |
US20100705112 |
申请日期 |
2010.02.12 |
申请人 |
FURUKAWA ELECTRIC CO., LTD. |
发明人 |
KAYA SHUSUKE;IKEDA NARIAKI;LI JIANG |
分类号 |
H01L29/80;H01L21/337;H01L29/808 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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