| 摘要 |
<p>Disclosed is a semiconductor device which is characterized by comprising an n-type SiC semiconductor base (1), a cathode electrode (5) that forms an ohmic contact with one main surface (1b) of the SiC semiconductor base (1), a first semiconductor region (6a) that is composed of a p-type SiC formed in the other surface (1a) of the SiC semiconductor base (1), a second semiconductor region (6b) that is composed of an n-type SiC formed in the other surface (1a) of the SiC semiconductor base (1), an ohmic junction layer (7) that forms an ohmic contact with the first semiconductor region (6a), and a Schottky junction layer (8) that forms a Schottky contact with the second semiconductor region (6b). The semiconductor device is also characterized in that the ohmic junction layer (7) has a metal layer in which a first semiconductor region (6a)-side part is composed of an alloy containing titanium and nickel and a part thereon is mainly composed of molybdenum, and the Schottky junction layer (8) is formed of a metal that is mainly composed of molybdenum.</p> |
