| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device that stably reads data, without lowering a data reading resolution even during verify, and also even when a power voltage is lowered. <P>SOLUTION: A read circuit 13 includes a current-voltage conversion circuit 20 for converting a cell current Icell of a memory cell MC to voltage data Vdata, and a sense amplifier 30 for comparing the voltage data Vdata and a reference voltage Vref. The current voltage conversion circuit 20 is constituted so as to include a variable load resistor which is connected to the memory cell MC through a bit line BLj. The variable load resistor includes P-channel type MOS transistors T11, T14, T17 as load resistors, and P-channel type MOS transistors T13, T16, T19 which constitute a switching circuit. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
