发明名称 |
SINGLE CRYSTAL GROUP III NITRIDE ARTICLES AND METHOD OF PRODUCING SAME BY HVPE METHOD INCORPORATING A POLYCRYSTALLINE LAYER FOR YIELD ENHANCEMENT |
摘要 |
In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.
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申请公布号 |
US2011198590(A1) |
申请公布日期 |
2011.08.18 |
申请号 |
US201113015303 |
申请日期 |
2011.01.27 |
申请人 |
PREBLE EDWARD A;LIU LIANGHONG;HANSER ANDREW D;WILLIAMS N MARK;XU XUEPING |
发明人 |
PREBLE EDWARD A.;LIU LIANGHONG;HANSER ANDREW D.;WILLIAMS N. MARK;XU XUEPING |
分类号 |
H01L21/20;H01L29/04 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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