| 摘要 |
<p>Disclosed is a method for manufacturing semiconductor devices. Said method includes: a supply step in which a treatment liquid (19) that oxidizes and dissolves a target substrate (20) is supplied to the surface of said substrate (20); a positioning step in which a mesh transfer member (10b) provided with a catalyst material is positioned near or in contact with the surface of the substrate (20); and a patterning step in which a pattern is formed on the surface of the substrate (20) via the aforementioned supply and positioning steps. As opposed to existing manufacturing methods, which manufacture semiconductor devices provided with semiconductor substrates with highly arbitrary (i.e. not very reproducible) patterns, by forming an appropriate pattern or mesh at the transfer member step, the disclosed method can stably manufacture semiconductor devices provided with semiconductor substrates that have patterns of a fixed level.</p> |
