NON-VOLATILE DATA STORAGE DEVICE, PROGRAMMING METHOD THEREOF AND MEMORY SYSTEM INCLUDING THE SAME

摘要

PURPOSE: A non-volatile data storage device, a programming method thereof and a memory system including the same are provided to prevent the bipolar between pass transistors by applying a bipolar prevention voltage to the word lines of memory blocks in which a program is prohibited. CONSTITUTION: In a non-volatile data storage device, a programming method thereof and a memory system including the same, a ground voltage is applied to a first ground selection signal line(GS1). A power supply voltage is applied to a first string selection signal line(SS1). A program voltage(Vpgm) is applied to a word line drive signal line(S1_2). A word line drive signal line is applied to the selected word line. A pass voltage(Vpass) is applied to the word line drive signal line(S1_1,S1_3~S1_n). The word line drive signal line is connected to the unselected word line.