| 发明名称 |
REACTOR DESIGNS FOR USE IN AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS |
| 摘要 |
<p>Reactor designs for use in ammonothermal growth of group-III nitride crystals. Internal heating is used to enhance and/or engineer fluid motion, gas mixing, and the ability to create solubility gradients within a vessel used for the ammonothermal growth of group-III nitride crystals. Novel baffle designs are used for control and improvement of continuous fluid motion within a vessel used for the ammonothermal growth of group-III nitride crystals.</p> |
| 申请公布号 |
KR20110093853(A) |
申请公布日期 |
2011.08.18 |
| 申请号 |
KR20117012920 |
申请日期 |
2009.11.04 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
PIMPUTKAR SIDDHA;KAMBER DERRICK S.;SPECK JAMES S.;NAKAMURA SHUJI |
| 分类号 |
C30B21/06;C30B7/00;C30B29/38;H01L21/20 |
主分类号 |
C30B21/06 |
| 代理机构 |
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