ETCHED SAPPHIRE SUBSTRATE AND FABRICATION METHOD THEREOF, AND LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF USING THIS SUBSTRATE

摘要

PURPOSE: A substrate with an etching valley, a light emitting device using the same, and manufacturing methods thereof are provided to quickly form an air bar to improve light extraction efficiency in a semiconductor layer by permeating etchant along an empty etchant valley. CONSTITUTION: A mask pattern is formed on a substrate(100). An etching valley(101) is formed by etching the substrate. A mask pattern is removed. A thin film layer(200) is formed on the substrate. An air bar(201), an air gap(202), and an air island(203) are formed on the thin film layer by the etchant in the etching valley.