METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor device and a method for manufacturing the same, with the semiconductor device having a partial separating body fixing SOI structure aimed at reducing the body resistance. SOLUTION: When the source, drain regions are formed in an NMOS transistor, an N-type impurity is avoided to be injected into a well region 11 under a gate direction extended region 41a by the gate direction extended region 41a of an N+-block region 41 in an N+-block resist 51. A high-resistance forming region in the well region 11, having a risk of being implanted with an N-type impurity in a gate electrode 9 longer direction extended line, is a high-resistance forming region A2, that is narrower than a conventional high resistance forming region A1. COPYRIGHT: (C)2011,JPO&INPIT