发明名称 |
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE |
摘要 |
The disclosure relates to integrated circuit fabrication, and more particularly to a method for fabricating a semiconductor device. An exemplary method for fabricating the semiconductor device comprises providing a substrate; forming pad oxide layers over a frontside and a backside of the substrate; forming hardmask layers over the pad oxide layers on the frontside and the backside of the substrate; and thinning the hardmask layer over the pad oxide layer on the frontside of the substrate.
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申请公布号 |
US2011201172(A1) |
申请公布日期 |
2011.08.18 |
申请号 |
US20100706782 |
申请日期 |
2010.02.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEW HAN-GUAN;ZHU MING;TEO LEE-WEE;CHUANG HARRY-HAK-LAY |
分类号 |
H01L21/762;H01L21/311 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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