NEAR-INFRARED PHOTODETECTOR AND IMAGE SENSOR EMPLOYING THE SAME AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A near infrared ray detector, an image sensor using the same, and a semiconductor manufacturing method thereof are provided to form a silicon film whose thickness is 70nm, thereby obtaining a very quickly response feature. CONSTITUTION: A semiconductor area is formed on a substrate. An antenna(28) includes first and second arms on the substrate. The antenna includes the semiconductor area between the arms. First and second electrodes(30) are separated on the substrate wherein the semiconductor area is placed between the first and second electrodes. An avalanche gain is generated in the semiconductor area by applying a bias voltage to the electrodes.