发明名称 |
REDUCED PROGRAMMING PULSE WIDTH FOR ENHANCED CHANNEL BOOSTING IN NON-VOLATILE STORAGE |
摘要 |
<p>Program disturb is reduced in a non-volatile storage system during a programming operation by switching from using programming pulses of a longer duration to programming pulses of a shorter duration, partway through the programming operation. A switchover point can be based on temperature, selected word line position and/or tracking of storage elements to a trigger state. The switchover point occurs sooner for higher temperatures, and for drain side word lines. The trigger state can be selected based on temperature. A portion of storage elements which are required to reach the trigger state to trigger a switchover can also be set a function of temperature. Programming pulses of a shorter duration improve channel boosting for inhibited storage elements, thereby reducing program disturb for these storage elements.</p> |
申请公布号 |
WO2011005401(A4) |
申请公布日期 |
2011.08.18 |
申请号 |
WO2010US37839 |
申请日期 |
2010.06.08 |
申请人 |
SANDISK CORPORATION;DONG, YINGDA;LUTZE, JEFFREY, W. |
发明人 |
DONG, YINGDA;LUTZE, JEFFREY, W. |
分类号 |
G11C16/10 |
主分类号 |
G11C16/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|