| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor having improved performance levels. SOLUTION: A source electrode 4 and a drain electrode 5 are respectively separated each other and laminated on an organic semiconductor layer 3. The organic semiconductor layer 3 has the laminating structure such that an upper organic semiconductor layer 3B is formed on a lower organic semiconductor layer 3A. The lower organic semiconductor layer 3A is extended up to a region R2, laminated on the drain electrode 5 from a region R1 laminated on the source electrode 4. The upper organic semiconductor layer 3B is provided in the location so as to be mutually separated from the regions R1, R2 and has solubility and conductivity that are higher than those of the lower organic semiconductor layer 3A. COPYRIGHT: (C)2011,JPO&INPIT |
