METHOD AND DEVICE FOR INSPECTING PATTERN DEFECTS

摘要

PROBLEM TO BE SOLVED: To solve a problem wherein a large charged potential may generate large contrast disorder on electron image formation since a charged distribution with a large potential may be generated on the whole wafer in a certain process of semiconductor manufacturing processes. SOLUTION: In an inspection method for pattern defects, when the wafer is conveyed from a reserve chamber 202 to a vacuum chamber 201, the charge of the wafer generated in advance is eliminated by using a precharge removing device 1201, or is decreased to a potential which can be controlled with precharging performed at the time of inspection. It is preferable that an installing position of the precharge removing device 1201 is at a vacuum chamber 201 side of an opening between the reserve chamber 202 and the vacuum chamber 201. COPYRIGHT: (C)2011,JPO&INPIT