| 摘要 |
A microlithography projection exposure apparatus for producing microelectronic components has at least two operating states. The microlithography projection exposure apparatus includes a reflective mask in an object plane. In the first operating state, a first partial region of the mask is illuminated by a first radiation, which has an assigned first centroid direction having a first centroid direction vector at each point of the first partial region. In the second operating state, a second partial region of the mask is illuminated by a second radiation, which has an assigned second centroid direction having a second centroid direction vector at each point of the second partial region. The first and the second partial region have a common overlap region. Furthermore, the microlithography projection exposure apparatus can be configured in such a way that at each point of at least one partial region of the overlap region the scalar triple product of the normalized first centroid direction vector, the normalized second centroid direction vector and a normalized vector that is perpendicular to the mask is less than 0.05.
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