发明名称 |
REACTIVE SITE DEACTIVATION AGAINST VAPOR DEPOSITION |
摘要 |
Methods and structures relating to the formation of mixed SAMs for preventing undesirable growth or nucleation on exposed surfaces inside a reactor are described. A mixed SAM can be formed on surfaces for which nucleation is not desired by introducing a first SAM precursor having molecules of a first length and a second SAM precursor having molecules of a second length shorter than the first. Examples of exposed surfaces for which a mixed SAM can be provided over include reactor surfaces and select surfaces of integrated circuit structures, such as insulator and dielectric layers.
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申请公布号 |
US2011198736(A1) |
申请公布日期 |
2011.08.18 |
申请号 |
US20100707065 |
申请日期 |
2010.02.17 |
申请人 |
ASM AMERICA, INC. |
发明人 |
SHERO ERIC;VERGHESE MOHITH;MUSCAT ANTHONY;MILLER SHAWN |
分类号 |
H01L29/00;B05D1/36;B32B43/00;C23C16/00;C23C16/04;C23F1/00;H01L21/302 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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