发明名称 PROCESS MONITORING APPARATUS AND PROCESS MONITORING METHOD
摘要 PURPOSE: A device and method for monitoring a process are provided to accurately measure the surface state of a probe electrode and/or the plasma change by measuring AC from plasma. CONSTITUTION: A probe substrate(420a) is mounted on a substrate holder(110). A plurality of probe electrodes(422) is arranged on one side of the probe substrate. An inner wiring(423) is arranged between the probe electrode and the probe substrate. A driving process unit(463) measures current flowing in the probe electrode. A voltage applying unit applies periodic driving voltage to the probe electrode.
申请公布号 KR20110092431(A) 申请公布日期 2011.08.18
申请号 KR20100011845 申请日期 2010.02.09
申请人 CHUNG, CHIN WOOK 发明人 CHUNG, CHIN WOOK;OH, SE JIN;JANG, SUNG HO;CHOI, LK JIN;KIM, JIN YONG
分类号 H01L21/66 主分类号 H01L21/66
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