PROCESS MONITORING APPARATUS AND PROCESS MONITORING METHOD
摘要
PURPOSE: A device and method for monitoring a process are provided to accurately measure the surface state of a probe electrode and/or the plasma change by measuring AC from plasma. CONSTITUTION: A probe substrate(420a) is mounted on a substrate holder(110). A plurality of probe electrodes(422) is arranged on one side of the probe substrate. An inner wiring(423) is arranged between the probe electrode and the probe substrate. A driving process unit(463) measures current flowing in the probe electrode. A voltage applying unit applies periodic driving voltage to the probe electrode.
申请公布号
KR20110092431(A)
申请公布日期
2011.08.18
申请号
KR20100011845
申请日期
2010.02.09
申请人
CHUNG, CHIN WOOK
发明人
CHUNG, CHIN WOOK;OH, SE JIN;JANG, SUNG HO;CHOI, LK JIN;KIM, JIN YONG